КТ371
КТ371, КТ371А
High-frequency low-power silicon transistor for amplifying microwave signals
This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
Description
Parameters
| Parameter | КТ371А | |
|---|---|---|
Collector surge current | IC-i | <40 mA |
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <10 V |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <10 V |
Constant power dissipated on the transistor collector | PC | <100 mW |
Static current transfer coefficient of bipolar transistor | hFE | 30 ~ 240 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <500 nA |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <3 GHz |
Noise factor | NF | <5 dB |
Bipolar transistor structure | Structure | NPN |