КТ368Б(М)
КТ368, КТ368А(М), КТ368Б(М)
High-frequency low-power silicon transistor with a normalized noise level for use in the input and subsequent stages of high-frequency amplifiers
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Description
Parameters
| Parameter | КТ368А(М) | КТ368Б(М) | |
|---|---|---|---|
Collector surge current | IC-i | <60 mA | |
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <15 V | |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <15 V | |
Constant power dissipated on the transistor collector | PC | <225 mW | |
Static current transfer coefficient of bipolar transistor | hFE | 50 ~ 450 | |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <500 nA | |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <900 MHz | |
Noise factor | NF | <3.3 dB | (not set) |
Bipolar transistor structure | Structure | NPN | |