КТ363Б(М)
КТ363, КТ363А(М), КТ363Б(М)
High-frequency low-power silicon transistor for switching and amplifying high and ultra-high frequency signals
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Description
Parameters
| Parameter | КТ363А(М) | КТ363Б(М) | |
|---|---|---|---|
Collector surge current | IC-i | <50 mA | |
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <15 V | |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <15 V | <12 V |
Constant power dissipated on the transistor collector | PC | <150 mW | |
Static current transfer coefficient of bipolar transistor | hFE | 20 ~ 120 | 40 ~ 120 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <500 nA | |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <1 GHz | <1.5 GHz |
Bipolar transistor structure | Structure | PNP | |