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КТ363

КТ363, КТ363А(М), КТ363Б(М)

High-frequency low-power silicon transistor for switching and amplifying high and ultra-high frequency signals

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Description

Parameters

ParameterКТ363А(М)КТ363Б(М)
Collector surge current
IC-i
<50 mA
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<15 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<15 V<12 V
Constant power dissipated on the transistor collector
PC
<150 mW
Static current transfer coefficient of bipolar transistor
hFE
20 ~ 12040 ~ 120
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<500 nA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<1 GHz<1.5 GHz
Bipolar transistor structure
Structure
PNP