КТ361Б

КТ361Б

КТ361, КТ361А, КТ361Б, КТ361В, КТ361Г, КТ361Г1, КТ361Д, КТ361Е, КТ361Ж, КТ361И, КТ361К

High-frequency low-power silicon transistor for operation in high-frequency amplifiers

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Description

Parameters

Parameter		КТ361А	КТ361Б	КТ361В	КТ361Г	КТ361Г1	КТ361Д	КТ361Е	КТ361Ж	КТ361И	КТ361К
Continuous collector current	I_C	<50 mA
Collector-base voltage at a given reverse collector current and open emitter circuit	U_CBO	<25 V	<20 V	<40 V	<35 V	<35 V	<40 V	<35 V	<10 V	<15 V	<60 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current	U_CEO	<25 V	<20 V	<40 V	<35 V	<35 V	<40 V	<35 V	<10 V	<15 V	<60 V
Constant power dissipated on the transistor collector	P_C	<150 mW
Static current transfer coefficient of bipolar transistor	hFE	20 ~ 90	50 ~ 350	40 ~ 160	50 ~ 350	100 ~ 350	20 ~ 90	50 ~ 350	50 ~ 350	>250	50 ~ 350
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера	I_CB-R	<1 µA
Limit frequency of current transfer coefficient of a bipolar transistor	f_h21	<250 MHz
Bipolar transistor structure	Structure	PNP