КТ355АМ
КТ355, КТ355АМ
High-frequency low-power silicon transistor for amplification and generation of signals in a wide frequency range
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Description
Parameters
| Parameter | КТ355АМ | |
|---|---|---|
Collector surge current | IC-i | <60 mA |
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <15 V |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <15 V |
Constant power dissipated on the transistor collector | PC | <225 mW |
Static current transfer coefficient of bipolar transistor | hFE | 80 ~ 300 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <500 nA |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <1.5 GHz |
Noise factor | NF | <5.5 dB |
Bipolar transistor structure | Structure | NPN |