КТ352
КТ352, КТ352А, КТ352Б
High-frequency low-power silicon transistor for switching and amplifying high-frequency signals
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Description
Parameters
| Parameter | КТ352А | КТ352Б | |
|---|---|---|---|
Collector surge current | IC-i | <200 mA | |
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <20 V | |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <15 V | |
Constant power dissipated on the transistor collector | PC | <300 mW | |
Static current transfer coefficient of bipolar transistor | hFE | 25 ~ 125 | 70 ~ 300 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <1 µA | |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <200 MHz | |
Bipolar transistor structure | Structure | PNP | |