КТ350
КТ350, КТ350А
High-frequency low-power silicon transistor for switching and amplifying high-frequency signals
Documents
Description
Parameters
| Parameter | КТ350А | |
|---|---|---|
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <20 V |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <20 V |
Constant power dissipated on the transistor collector | PC | <300 mW |
Static current transfer coefficient of bipolar transistor | hFE | 20 ~ 200 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <1 µA |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <100 MHz |
Bipolar transistor structure | Structure | PNP |