КТ349А
КТ349, КТ349А, КТ349Б, КТ349В
High-frequency low-power silicon transistor for operation in switching, pulse and amplifying high-frequency circuits
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Description
Parameters
| Parameter | КТ349А | КТ349Б | КТ349В | |
|---|---|---|---|---|
Collector surge current | IC-i | <100 mA | ||
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <20 V | ||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <15 V | ||
Constant power dissipated on the transistor collector | PC | <200 mW | ||
Static current transfer coefficient of bipolar transistor | hFE | 20 ~ 80 | 40 ~ 160 | 120 ~ 300 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <1 µA | ||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <300 MHz | ||
Bipolar transistor structure | Structure | PNP | ||