Доход от майнинга

КТ347

КТ347, КТ347А, КТ347Б, КТ347В

High-frequency low-power silicon transistor for operation in switching, pulse and amplifying high-frequency circuits

Documents

Description

Parameters

ParameterКТ347АКТ347БКТ347В
Collector surge current
IC-i
<110 mA
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<15 V<9 V<6 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<15 V<9 V<6 V
Constant power dissipated on the transistor collector
PC
<150 mW
Static current transfer coefficient of bipolar transistor
hFE
30 ~ 40030 ~ 40050 ~ 400
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<1 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<500 MHz<500 MHz<200 MHz
Bipolar transistor structure
Structure
PNP