Доход от майнинга

КТ345А

КТ345, КТ345А, КТ345Б, КТ345В

High-frequency low-power silicon transistor for operation in switching, pulse and amplifying high-frequency circuits

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterКТ345АКТ345БКТ345В
Collector surge current
IC-i
<300 mA
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<20 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<20 V
Constant power dissipated on the transistor collector
PC
<300 mW
Static current transfer coefficient of bipolar transistor
hFE
>20>50>70
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<500 nA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<350 MHz
Bipolar transistor structure
Structure
PNP