КТ339
КТ339, КТ339А(М), КТ339Б, КТ339В, КТ339Г, КТ339Д
High-frequency low-power silicon transistor for operation in high-frequency amplification circuits
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Description
Parameters
| Parameter | КТ339А(М) | КТ339Б | КТ339В | КТ339Г | КТ339Д | |
|---|---|---|---|---|---|---|
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <40 V | <25 V | <40 V | <40 V | <40 V |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <25 V | <15 V | <25 V | <25 V | <25 V |
Constant power dissipated on the transistor collector | PC | <260 mW | ||||
Static current transfer coefficient of bipolar transistor | hFE | >25 | >15 | >25 | >40 | >15 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <1 µA | ||||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <300 MHz | <250 MHz | <450 MHz | <250 MHz | <250 MHz |
Bipolar transistor structure | Structure | NPN | ||||