КТ316Б(М)
КТ316, КТ316А(М), КТ316Б(М), КТ316В(М), КТ316Г(М), КТ316Д(М)
High-frequency low-power silicon transistor for switching and amplifying high-frequency signals
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Description
Parameters
| Parameter | КТ316А(М) | КТ316Б(М) | КТ316В(М) | КТ316Г(М) | КТ316Д(М) | |
|---|---|---|---|---|---|---|
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <10 V | ||||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <10 V | ||||
Constant power dissipated on the transistor collector | PC | <150 mW | ||||
Static current transfer coefficient of bipolar transistor | hFE | 20 ~ 60 | 40 ~ 120 | 40 ~ 120 | 20 ~ 100 | 60 ~ 300 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <500 nA | ||||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <600 MHz | <800 MHz | <800 MHz | <600 MHz | <800 MHz |
Bipolar transistor structure | Structure | NPN | ||||