КТ3157А
КТ3157, КТ3157А
High Frequency Low Power Silicon Switching Transistor for Pulse Circuits
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Description
Parameters
| Parameter | КТ3157А | |
|---|---|---|
Collector surge current | IC-i | <100 mA |
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <250 V |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <250 V |
Constant power dissipated on the transistor collector | PC | <200 mW |
Static current transfer coefficient of bipolar transistor | hFE | >50 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <100 nA |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <60 MHz |
Bipolar transistor structure | Structure | PNP |