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КТ3130А-9

КТ3130, КТ3130А-9, КТ3130Б-9, КТ3130В-9, КТ3130Г-9, КТ3130Д-9, КТ3130Е-9, КТ3130Ж-9, КТ3130-9

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Description

Parameters

Parameter		КТ3130А-9	КТ3130Б-9	КТ3130В-9	КТ3130Г-9	КТ3130Д-9	КТ3130Е-9	КТ3130Ж-9	КТ3130-9
Collector-base voltage at a given reverse collector current and open emitter circuit	U_CBO	<50 V	<50 V	<30 V	<20 V	<30 V	<20 V	<30 V	(not set)
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current	U_CEO	<50 V	<50 V	<30 V	<20 V	<30 V	<20 V	<30 V	(not set)
Constant power dissipated on the transistor collector	P_C	<100 mW
Static current transfer coefficient of bipolar transistor	hFE	100 ~ 250	200 ~ 500	200 ~ 500	400 ~ 1000	200 ~ 500	400 ~ 1000	100 ~ 500	(not set)
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера	I_CB-R	<100 nA	<100 nA	<100 nA	<50.1 µA	<100 nA	<100 nA	<100 nA	(not set)
Limit frequency of current transfer coefficient of a bipolar transistor	f_h21	<150 MHz
Noise factor	N_F	<10 dB	<10 dB	<10 dB	<10 dB	<10 dB	<4 dB	<4 dB	(not set)
Bipolar transistor structure	Structure	NPN