Доход от майнинга

КТ3129Б-9

КТ3129, КТ3129А-9, КТ3129Б-9, КТ3129В-9, КТ3129Г-9, КТ3129Д-9

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

Parameter		КТ3129А-9	КТ3129Б-9	КТ3129В-9	КТ3129Г-9	КТ3129Д-9
Collector surge current	I_C-i	<200 mA
Collector-base voltage at a given reverse collector current and open emitter circuit	U_CBO	<50 V	<50 V	<30 V	<30 V	<20 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current	U_CEO	<50 V	<50 V	<30 V	<30 V	<20 V
Constant power dissipated on the transistor collector	P_C	<75 mW
Static current transfer coefficient of bipolar transistor	hFE	30 ~ 120	80 ~ 250	80 ~ 250	200 ~ 500	200 ~ 500
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера	I_CB-R	<1 µA
Limit frequency of current transfer coefficient of a bipolar transistor	f_h21	<200 MHz
Bipolar transistor structure	Structure	PNP