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КТ3129

КТ3129, КТ3129А-9, КТ3129Б-9, КТ3129В-9, КТ3129Г-9, КТ3129Д-9

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Description

Parameters

Parameter		КТ3129А-9	КТ3129Б-9	КТ3129В-9	КТ3129Г-9	КТ3129Д-9
Collector surge current	I_C-i	<200 mA
Collector-base voltage at a given reverse collector current and open emitter circuit	U_CBO	<50 V	<50 V	<30 V	<30 V	<20 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current	U_CEO	<50 V	<50 V	<30 V	<30 V	<20 V
Constant power dissipated on the transistor collector	P_C	<75 mW
Static current transfer coefficient of bipolar transistor	hFE	30 ~ 120	80 ~ 250	80 ~ 250	200 ~ 500	200 ~ 500
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера	I_CB-R	<1 µA
Limit frequency of current transfer coefficient of a bipolar transistor	f_h21	<200 MHz
Bipolar transistor structure	Structure	PNP