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КТ3128А(1)

КТ3128, КТ3128А(1)

High-frequency low-power silicon transistor for use in television channel selectors with automatic gain control

Documents

Description

Parameters

ParameterКТ3128А(1)
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<40 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<40 V
Constant power dissipated on the transistor collector
PC
<100 mW
Static current transfer coefficient of bipolar transistor
hFE
15 ~ 150
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<1 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<800 MHz
Bipolar transistor structure
Structure
PNP