КТ3127А
КТ3127, КТ3127А
High-frequency low-power silicon transistor with a normalized noise level at a frequency of 100 MHz for circuits for generating, amplifying, converting high-frequency oscillations in stages with AGC
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Description
Parameters
| Parameter | КТ3127А | |
|---|---|---|
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <20 V |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <20 V |
Constant power dissipated on the transistor collector | PC | <100 mW |
Static current transfer coefficient of bipolar transistor | hFE | 25 ~ 150 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <1 µA |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <600 MHz |
Noise factor | NF | <5 dB |
Bipolar transistor structure | Structure | PNP |