КТ3127

КТ3127, КТ3127А

High-frequency low-power silicon transistor with a normalized noise level at a frequency of 100 MHz for circuits for generating, amplifying, converting high-frequency oscillations in stages with AGC

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Description

Parameters

ParameterКТ3127А
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<20 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<20 V
Constant power dissipated on the transistor collector
PC
<100 mW
Static current transfer coefficient of bipolar transistor
hFE
25 ~ 150
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<1 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<600 MHz
Noise factor
NF
<5 dB
Bipolar transistor structure
Structure
PNP