КТ3126А
КТ3126, КТ3126А, КТ3126Б
High-frequency low-power silicon transistor for generating, amplifying and converting high-frequency oscillations
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Description
Parameters
| Parameter | КТ3126А | КТ3126Б | |
|---|---|---|---|
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <20 V | |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <20 V | |
Constant power dissipated on the transistor collector | PC | <150 mW | |
Static current transfer coefficient of bipolar transistor | hFE | 25 ~ 100 | 60 ~ 180 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <1 µA | |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <500 MHz | |
Noise factor | NF | <5 dB | |
Bipolar transistor structure | Structure | PNP | |