КТ3123А-2

КТ3123, КТ3123А-2, КТ3123Б-2, КТ3123В-2

High-frequency low-power silicon transistor with a normalized noise level at a frequency of 1 GHz for use in amplifier, pulse and switching modes in circuits of amplifiers and self-oscillators of microwave signals

Documents

Description

Parameters

ParameterКТ3123А-2КТ3123Б-2КТ3123В-2
Collector surge current
IC-i
<50 mA
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<15 V<15 V<10 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<15 V<15 V<10 V
Constant power dissipated on the transistor collector
PC
<150 mW
Static current transfer coefficient of bipolar transistor
hFE
>40
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<10 nA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<5 GHz
Noise factor
NF
<2.4 dB<3 dB<2.4 dB
Bipolar transistor structure
Structure
PNP