КТ3123
КТ3123, КТ3123А-2, КТ3123Б-2, КТ3123В-2
High-frequency low-power silicon transistor with a normalized noise level at a frequency of 1 GHz for use in amplifier, pulse and switching modes in circuits of amplifiers and self-oscillators of microwave signals
Documents
Description
Parameters
| Parameter | КТ3123А-2 | КТ3123Б-2 | КТ3123В-2 | |
|---|---|---|---|---|
Collector surge current | IC-i | <50 mA | ||
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <15 V | <15 V | <10 V |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <15 V | <15 V | <10 V |
Constant power dissipated on the transistor collector | PC | <150 mW | ||
Static current transfer coefficient of bipolar transistor | hFE | >40 | ||
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <10 nA | ||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <5 GHz | ||
Noise factor | NF | <2.4 dB | <3 dB | <2.4 dB |
Bipolar transistor structure | Structure | PNP | ||