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КТ312Б

КТ312, КТ312А, КТ312Б, КТ312В

Low-frequency low-power silicon transistor for operation in amplifying, switching and generating devices

Documents

Description

Parameters

ParameterКТ312АКТ312БКТ312В
Collector surge current
IC-i
<60 mA
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<20 V<35 V<20 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<20 V<35 V<20 V
Constant power dissipated on the transistor collector
PC
<225 mW
Static current transfer coefficient of bipolar transistor
hFE
10 ~ 10025 ~ 10050 ~ 280
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<10 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<280 MHz<120 MHz<120 MHz
Bipolar transistor structure
Structure
NPN