КТ3117Б
КТ3117, КТ3117А(1), КТ3117Б
Low Power Silicon High Frequency Switching Transistor
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Description
Parameters
| Parameter | КТ3117А(1) | КТ3117Б | |
|---|---|---|---|
Collector surge current | IC-i | <800 mA | |
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <60 V | <75 V |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <60 V | <75 V |
Constant power dissipated on the transistor collector | PC | <300 mW | |
Static current transfer coefficient of bipolar transistor | hFE | 40 ~ 200 | 100 ~ 300 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <10 µA | |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <200 MHz | |
Bipolar transistor structure | Structure | NPN | |