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КТ3115

КТ3115, КТ3115А-2, КТ3115В-2, КТ3115Г-2

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Description

Parameters

ParameterКТ3115А-2КТ3115В-2КТ3115Г-2
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<10 V<10 V<7 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<10 V<10 V<7 V
Constant power dissipated on the transistor collector
PC
<70 mW<70 mW<50 mW
Static current transfer coefficient of bipolar transistor
hFE
>15
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<500 nA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<5.8 GHz
Noise factor
NF
<5 dB<6 dB<4 dB
Bipolar transistor structure
Structure
NPN