КТ3109Б
КТ3109, КТ3109А, КТ3109Б, КТ3109В
High-frequency low-power silicon transistor with a normalized noise level at a frequency of 800 MHz for use in selectors of television channels of the meter and decimeter wavelength ranges and in other receiving and amplifying equipment
Documents
Description
Parameters
| Parameter | КТ3109А | КТ3109Б | КТ3109В | |
|---|---|---|---|---|
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <30 V | <25 V | <25 V |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <25 V | <20 V | <20 V |
Constant power dissipated on the transistor collector | PC | <170 mW | ||
Static current transfer coefficient of bipolar transistor | hFE | >20 | >20 | >15 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <100 nA | ||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <800 MHz | <300 MHz | <600 MHz |
Noise factor | NF | <6 dB | <7 dB | <8 dB |
Bipolar transistor structure | Structure | PNP | ||