КТ3109А

КТ3109, КТ3109А, КТ3109Б, КТ3109В

High-frequency low-power silicon transistor with a normalized noise level at a frequency of 800 MHz for use in selectors of television channels of the meter and decimeter wavelength ranges and in other receiving and amplifying equipment

Documents

Description

Parameters

ParameterКТ3109АКТ3109БКТ3109В
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<30 V<25 V<25 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<25 V<20 V<20 V
Constant power dissipated on the transistor collector
PC
<170 mW
Static current transfer coefficient of bipolar transistor
hFE
>20>20>15
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<100 nA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<800 MHz<300 MHz<600 MHz
Noise factor
NF
<6 dB<7 dB<8 dB
Bipolar transistor structure
Structure
PNP