КТ3108Б
КТ3108, КТ3108А, КТ3108Б, КТ3108В
High-frequency low-power silicon transistor with a normalized noise level of 100 MHz, designed for use in logarithmic video amplifiers and linear high-frequency amplifiers
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Description
Parameters
| Parameter | КТ3108А | КТ3108Б | КТ3108В | |
|---|---|---|---|---|
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <60 V | <45 V | <45 V |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <60 V | <45 V | <45 V |
Constant power dissipated on the transistor collector | PC | <300 mW | ||
Static current transfer coefficient of bipolar transistor | hFE | 50 ~ 150 | 50 ~ 150 | 100 ~ 300 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <200 nA | ||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <250 MHz | <250 MHz | <300 MHz |
Noise factor | NF | <6 dB | ||
Bipolar transistor structure | Structure | PNP | ||