КТ3108
КТ3108, КТ3108А, КТ3108Б, КТ3108В
High-frequency low-power silicon transistor with a normalized noise level of 100 MHz, designed for use in logarithmic video amplifiers and linear high-frequency amplifiers
This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
Description
Parameters
| Parameter | КТ3108А | КТ3108Б | КТ3108В | |
|---|---|---|---|---|
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <60 V | <45 V | <45 V |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <60 V | <45 V | <45 V |
Constant power dissipated on the transistor collector | PC | <300 mW | ||
Static current transfer coefficient of bipolar transistor | hFE | 50 ~ 150 | 50 ~ 150 | 100 ~ 300 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <200 nA | ||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <250 MHz | <250 MHz | <300 MHz |
Noise factor | NF | <6 dB | ||
Bipolar transistor structure | Structure | PNP | ||