КТ3107Б

КТ3107, КТ3107А, КТ3107Б, КТ3107В, КТ3107Г, КТ3107Д, КТ3107Е, КТ3107Ж, КТ3107И, КТ3107К, КТ3107Л

High-frequency low-power silicon transistor with a normalized noise level at a frequency of 1 kHz are designed to amplify, generate and switch low and high frequency signals

Documents

Description

Parameters

ParameterКТ3107АКТ3107БКТ3107ВКТ3107ГКТ3107ДКТ3107ЕКТ3107ЖКТ3107ИКТ3107ККТ3107Л
Collector surge current
IC-i
<200 mA
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<50 V<50 V<30 V<30 V<30 V<25 V<25 V<50 V<30 V<25 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<45 V<45 V<25 V<25 V<25 V<20 V<20 V<45 V<25 V<20 V
Constant power dissipated on the transistor collector
PC
<300 mW
Static current transfer coefficient of bipolar transistor
hFE
70 ~ 140120 ~ 22070 ~ 140120 ~ 220180 ~ 460120 ~ 220180 ~ 460180 ~ 460380 ~ 800380 ~ 800
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<100 nA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<200 MHz
Noise factor
NF
<10 dB<10 dB<10 dB<10 dB<10 dB<4 dB<4 dB<10 dB<10 dB<4 dB
Bipolar transistor structure
Structure
PNP