КТ3101А-2
КТ3101, КТ3101А-2
High-frequency low-power silicon transistor with a normalized noise level at a frequency of 2.25 GHz for use in the input and subsequent stages of microwave amplifiers
This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
Description
Parameters
| Parameter | КТ3101А-2 | |
|---|---|---|
Collector surge current | IC-i | <40 mA |
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <15 V |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <15 V |
Constant power dissipated on the transistor collector | PC | <100 mW |
Static current transfer coefficient of bipolar transistor | hFE | 35 ~ 300 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <500 nA |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <4 GHz |
Noise factor | NF | <4.5 dB |
Bipolar transistor structure | Structure | NPN |