КТ306Б(М)
КТ306, КТ306А(М), КТ306Б(М), КТ306В(М), КТ306Г(М), КТ306Д(М)
Low-frequency low-power silicon transistor for switching and amplifying high-frequency signals
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Description
Parameters
| Parameter | КТ306А(М) | КТ306Б(М) | КТ306В(М) | КТ306Г(М) | КТ306Д(М) | |
|---|---|---|---|---|---|---|
Collector surge current | IC-i | <50 mA | ||||
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <15 V | ||||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <10 V | ||||
Constant power dissipated on the transistor collector | PC | <150 mW | ||||
Static current transfer coefficient of bipolar transistor | hFE | 20 ~ 60 | 40 ~ 120 | 20 ~ 100 | 40 ~ 200 | 30 ~ 150 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <500 nA | ||||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <300 MHz | <500 MHz | <300 MHz | <500 MHz | <200 MHz |
Bipolar transistor structure | Structure | NPN | ||||