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КТ208

КТ208, КТ208А(1), КТ208Б(1), КТ208В(1), КТ208Г(1), КТ208Д(1), КТ208Е(1), КТ208Ж(1), КТ208И(1), КТ208К(1), КТ208Л(1), КТ208М(1)

Low-power silicon transistor for operation in amplifying and generating devices

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Description

Parameters

ParameterКТ208А(1)КТ208Б(1)КТ208В(1)КТ208Г(1)КТ208Д(1)КТ208Е(1)КТ208Ж(1)КТ208И(1)КТ208К(1)КТ208Л(1)КТ208М(1)
Collector surge current
IC-i
<500 mA
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<20 V<20 V<20 V<30 V<30 V<30 V<45 V<45 V<45 V<60 V<60 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<20 V<20 V<20 V<30 V<30 V<30 V<45 V<45 V<45 V<60 V<60 V
Constant power dissipated on the transistor collector
PC
<200 mW
Static current transfer coefficient of bipolar transistor
hFE
20 ~ 6040 ~ 12080 ~ 24020 ~ 6040 ~ 12080 ~ 24020 ~ 6040 ~ 12080 ~ 24020 ~ 6040 ~ 120
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<1 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<5 MHz
Noise factor
NF
(not set)(not set)<4 dB(not set)(not set)<4 dB(not set)(not set)<4 dB(not set)(not set)
Bipolar transistor structure
Structure
PNP