КТ203Б(М)

КТ203, КТ203А(М), КТ203Б(М), КТ203В(М)

Low-power silicon transistor for operation in amplifying and switching devices

Documents

Description

KT203A, KT203B, KT203V (КТ203А, КТ203Б, КТ203В) – soviet low-power silicon P-N-P transistor.

КТ203 case drawing and pinout

Common view of transistor KT203 with its passport on background

Common view of transistor KT203 with its passport on background

Parameters

ParameterКТ203А(М)КТ203Б(М)КТ203В(М)
Collector surge current
IC-i
<50 mA
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<60 V<30 V<15 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<60 V<30 V<15 V
Constant power dissipated on the transistor collector
PC
<150 mW
Static current transfer coefficient of bipolar transistor
hFE
>930 ~ 15030 ~ 200
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<1 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<5 MHz
Bipolar transistor structure
Structure
PNP