КТ203Б(М)
КТ203, КТ203А(М), КТ203Б(М), КТ203В(М)
Low-power silicon transistor for operation in amplifying and switching devices
Documents
Description
KT203A, KT203B, KT203V (КТ203А, КТ203Б, КТ203В) – soviet low-power silicon P-N-P transistor.
Parameters
| Parameter | КТ203А(М) | КТ203Б(М) | КТ203В(М) | |
|---|---|---|---|---|
Collector surge current | IC-i | <50 mA | ||
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <60 V | <30 V | <15 V |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <60 V | <30 V | <15 V |
Constant power dissipated on the transistor collector | PC | <150 mW | ||
Static current transfer coefficient of bipolar transistor | hFE | >9 | 30 ~ 150 | 30 ~ 200 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <1 µA | ||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <5 MHz | ||
Bipolar transistor structure | Structure | PNP | ||