КТ201Б(М)
КТ201, КТ201А(М), КТ201Б(М), КТ201В(М), КТ201Г(М), КТ201Д(М)
Low power silicon transistor for amplifying low frequency signals
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Description
Parameters
| Parameter | КТ201А(М) | КТ201Б(М) | КТ201В(М) | КТ201Г(М) | КТ201Д(М) | |
|---|---|---|---|---|---|---|
Collector surge current | IC-i | <100 mA | ||||
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <20 V | <20 V | <10 V | <10 V | <10 V |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <20 V | <20 V | <10 V | <10 V | <10 V |
Constant power dissipated on the transistor collector | PC | <150 mW | ||||
Static current transfer coefficient of bipolar transistor | hFE | 20 ~ 60 | 30 ~ 90 | 30 ~ 90 | 70 ~ 210 | 30 ~ 90 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <1 µA | ||||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <10 MHz | ||||
Noise factor | NF | (not set) | (not set) | (not set) | (not set) | <15 dB |
Bipolar transistor structure | Structure | NPN | ||||