ГТ906А(М)
ГТ906, ГТ906А(М)
High-power high-frequency germanium transistor for use in voltage converters, switching and other pulse stages
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Description
Parameters
| Parameter | ГТ906А(М) | |
|---|---|---|
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <75 V |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <75 V |
Static current transfer coefficient of bipolar transistor | hFE | 30 ~ 150 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <8 mA |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <30 MHz |
Bipolar transistor structure | Structure | PNP |
Transistor collector power with heatsink | PC-HS | <15 W |