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ГТ905

ГТ905, ГТ905А, ГТ905Б

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Description

Parameters

ParameterГТ905АГТ905Б
Collector surge current
IC-i
<7 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<75 V<60 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<75 V<60 V
Static current transfer coefficient of bipolar transistor
hFE
35 ~ 100
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<20 mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<60 MHz
Bipolar transistor structure
Structure
PNP
Transistor collector power with heatsink
PC-HS
<6 W