1Т813Б
1Т813, 1Т813А, 1Т813Б, 1Т813В
High power germanium transistor for switching devices
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Description
Parameters
| Parameter | 1Т813А | 1Т813Б | 1Т813В | |
|---|---|---|---|---|
Collector surge current | IC-i | <40 A | ||
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <100 V | <125 V | <150 V |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <100 V | <125 V | <150 V |
Constant power dissipated on the transistor collector | PC | <1.5 W | ||
Static current transfer coefficient of bipolar transistor | hFE | 10 ~ 60 | ||
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <16 mA | ||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <5 MHz | ||
Bipolar transistor structure | Structure | PNP | ||
Transistor collector power with heatsink | PC-HS | <50 W | ||