1Т813
1Т813, 1Т813А, 1Т813Б, 1Т813В
High power germanium transistor for switching devices
This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
Description
Parameters
| Parameter | 1Т813А | 1Т813Б | 1Т813В | |
|---|---|---|---|---|
Collector surge current | IC-i | <40 A | ||
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <100 V | <125 V | <150 V |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <100 V | <125 V | <150 V |
Constant power dissipated on the transistor collector | PC | <1.5 W | ||
Static current transfer coefficient of bipolar transistor | hFE | 10 ~ 60 | ||
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <16 mA | ||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <5 MHz | ||
Bipolar transistor structure | Structure | PNP | ||
Transistor collector power with heatsink | PC-HS | <50 W | ||