ГТ806

ГТ806, ГТ806А, ГТ806Б, ГТ806В, ГТ806Г, ГТ806Д

High power germanium transistor for operation in pulsed circuits, converters and current and voltage stabilizers

Documents

Description

Parameters

ParameterГТ806АГТ806БГТ806ВГТ806ГГТ806Д
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<75 V<100 V<120 V<50 V<140 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<75 V<100 V<120 V<50 V<140 V
Constant power dissipated on the transistor collector
PC
<2 W
Static current transfer coefficient of bipolar transistor
hFE
10 ~ 100
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<15 mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<10 MHz
Bipolar transistor structure
Structure
PNP
Transistor collector power with heatsink
PC-HS
<30 W