ГТ346Б

ГТ346, ГТ346А, ГТ346Б, ГТ346В

High-frequency low-power germanium transistor with a normalized noise level at a frequency of 800 MHz to amplify signals in the decimeter wavelength range with AGC

Documents

Description

Parameters

ParameterГТ346АГТ346БГТ346В
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<20 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<20 V
Constant power dissipated on the transistor collector
PC
<50 mW
Static current transfer coefficient of bipolar transistor
hFE
10 ~ 15010 ~ 15015 ~ 150
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<10 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<700 MHz<550 MHz<550 MHz
Noise factor
NF
<3 dB<5.5 dB<6 dB
Bipolar transistor structure
Structure
PNP