ГТ346А
ГТ346, ГТ346А, ГТ346Б, ГТ346В
High-frequency low-power germanium transistor with a normalized noise level at a frequency of 800 MHz to amplify signals in the decimeter wavelength range with AGC
Documents
Description
Parameters
| Parameter | ГТ346А | ГТ346Б | ГТ346В | |
|---|---|---|---|---|
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <20 V | ||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <20 V | ||
Constant power dissipated on the transistor collector | PC | <50 mW | ||
Static current transfer coefficient of bipolar transistor | hFE | 10 ~ 150 | 10 ~ 150 | 15 ~ 150 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <10 µA | ||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <700 MHz | <550 MHz | <550 MHz |
Noise factor | NF | <3 dB | <5.5 dB | <6 dB |
Bipolar transistor structure | Structure | PNP | ||