ГТ328Б
ГТ328, ГТ328А, ГТ328Б, ГТ328В
High-frequency low-power germanium transistor with a normalized noise level at a frequency of 180 MHz, designed to amplify signals in the meter wavelength range with AGC
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Description
Parameters
| Parameter | ГТ328А | ГТ328Б | ГТ328В | |
|---|---|---|---|---|
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <15 V | ||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <15 V | ||
Constant power dissipated on the transistor collector | PC | <50 mW | ||
Static current transfer coefficient of bipolar transistor | hFE | 20 ~ 200 | 40 ~ 200 | 10 ~ 70 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <10 µA | ||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <400 MHz | <300 MHz | <300 MHz |
Noise factor | NF | <7 dB | ||
Bipolar transistor structure | Structure | PNP | ||