ГТ313Б
ГТ313, ГТ313А, ГТ313Б, ГТ313В
High-frequency low-power germanium transistor for amplifying high and ultra-high frequency signals
Documents
Description
Parameters
| Parameter | ГТ313А | ГТ313Б | ГТ313В | |
|---|---|---|---|---|
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <15 V | ||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <15 V | ||
Constant power dissipated on the transistor collector | PC | <100 mW | ||
Static current transfer coefficient of bipolar transistor | hFE | 20 ~ 250 | 20 ~ 250 | 30 ~ 170 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <5 µA | ||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <300 MHz | <450 MHz | <350 MHz |
Bipolar transistor structure | Structure | PNP | ||