Classification of USSR diodes
The diode marking system consists of five main elements:
- Letter (or number) denoting the material of the diode:
- Г (1) – germanium;
- К (2) – silicon;
- A (3) – gallium compounds (e.g. gallium arsenide);
- И (4) – indium compounds (e.g. indium phosphate).
- A letter defining a subclass of diodes (Table 3.1.).
- The number indicating the use of the diode (table. 3.1.).
- A number indicating the development serial number or stabilization voltage for zener diodes and stabilizers.
- A letter that defines the various electrical parameters of this device.
| Д | Rectifier and impulse diodes |
| Ц | Rectifier towers and assembly |
| A | UHF diodes |
| В | Varicaps |
| И | Tunnel diodes |
| Л | Emiting diodes |
| О | Optocouplers |
| Н | Diode thyristors |
| У | Triode Thyristors |
| Г | Noise generators |
| Б | Gunn diodes |
| С | Zener diodes |
Diode designation
| Designation | Subclass name | |
|---|---|---|
| Letter | Digit | |
| Д | 1 | Low power rectifier (Iavg. max ≤ 0,3 A) |
| 2 | Medium Power Rectifiers (Iavg. max = 0,3…10 A) | |
| 4 | Pulse (tR rev. recover. ≤ 500 нс) | |
| 5 | Pulse (tR rev. recover. = 150…500 нс.) | |
| 6 | Pulse (tR rev. recover. = 30…150 нс.) | |
| 7 | Pulse (tR rev. recover. = 5…30 нс.) | |
| 8 | Pulse (tR rev. recover. = 1…5 нс.) | |
| 9 | Pulse (tR rev. recover. < 1 нс.) | |
| Ц | 1 | Low power rectifier towers (Iср. max. ≤ 0,3 A) |
| 2 | – "" – medium power (Iср. max. = 0,3…10 A) | |
| 3 | Low Power Rectifier Blocks (Iср. max. ≤ 0,3 A) | |
| 4 | – "" – medium power (Iср. max. = 0,3…10 A) | |
| A | 1 | UHF mixing diodes |
| 2 | – "" – detector | |
| 3 | – "" – amplifying | |
| 4 | – "" – parametric | |
| 5 | – "" – regulatory (switching, limiting and modulating) | |
| 6 | – "" – multiplying | |
| 7 | – "" – generating | |
| 8 | – "" – Pulse | |
| В | 1 | Adjustable varicaps |
| 2 | Multiplying varicaps | |
| И | 1 | Tunnel amplifying diodes |
| 2 | – "" – generating | |
| 3 | – "" – switching | |
| 4 | Backward diodes | |
| Л | Sources of infrared radiation | |
| 1 | Emiting diodes | |
| 2 | Emiting modules | |
| Visual Presentation Devices | ||
| 3 | Emiting diodes with luminance less than 500 cd/m2. | |
| 4 | – "" – for iconic indicators (with luminance more than 500 cd/m2.) | |
| 5 | – "" – for iconic displays | |
| 6 | – "" – for scales | |
| 7 | – "" – for screens | |
| О | Р | Resistor optocouplers |
| Д | Diode optocouplers | |
| У | Thyristor optocouplers | |
| Т | Transistor optocouplers | |
| Н | 1 | Thyristors diode with a maximum forward current less than 0,3 A |
| 2 | – "" – with a maximum forward current greater than 0,3…10 A | |
| У | Thyristors triode unclosable | |
| 1 | maximum average forward current < 0.3 A or maximum forward pulse current < 15 A | |
| 2 | – "" – 0,3…10 A – "" – 15…100 A | |
| 7 | – "" – > 10 A – "" – > 100 A | |
| Lockable thyristors | ||
| 3 | – "" – < 0,3 A – "" – < 15 A | |
| 4 | – "" – 0,3…10 A – "" – 15…100 A | |
| 8 | – "" – > 10 A – "" – > 100 A | |
| Symmetric Thyristors (Triacs) | ||
| 5 | – "" – < 0,3 A – "" – < 15 A | |
| 6 | – "" – 0,3…10 A – "" – 15…100 A | |
| 9 | – "" – > 10 A – "" – > 100 A | |
| Г | 1 | Low Frequency Noise Generators |
| 2 | High Frequency Noise Generators | |
| Б | Gunn diodes | |
| С | 1 | Zener diodes and stabistors with power ≤ 0.3 W and stabilization voltage < 10 V |
| 2 | – "" – ≤ 0,3 Вт – "" – 10…100 В | |
| 3 | – "" – ≤ 0,3 Вт – "" – > 100 В | |
| 4 | – "" – 0,3…5 Вт – "" – < 10 В | |
| 5 | – "" – 0,3…5 Вт – "" – 10…100 В | |
| 6 | – "" – 0,3…5 Вт – "" – > 100 В | |
| 7 | – "" – 5…10 Вт – "" – < 10 В | |
| 8 | – "" – 5…10 Вт – "" – 10…100 В | |
| 9 | – "" – 5…10 Вт – "" – > 100 В | |
A two-digit number from 01 to 99 is used to indicate the development serial number. If the serial number of the development exceeds the number 99, then in the future use a three-digit number from 101 to 999.
The fifth element is a letter that conditionally defines the classification (sorting by parameters) of devices manufactured by a single technology. The fifth element is the letters of the Russian alphabet, with the exception of the letters З, О, Ч, Ы, Ш, Щ, Ю, Я, Ь, Ъ, Э.
The following symbols are used as additional designation elements:
- digits 1 ... 9 to indicate modifications of the device, leading to a change in its design or electrical parameters;
- the letter C to designate assemblies - sets of the same type of devices in a common housing, not electrically connected or connected by the terminals of the same name;
- numbers written with a hyphen to indicate the following modifications of the design of open-frame units:
1 - with flexible leads without a crystal holder;2 - with flexible leads on the crystal holder (substrate);3 - with hard leads without a crystal holder;4 - with hard leads on the crystal holder (substrate);5 - with pads without a crystal holder (substrate) and without leads;6 - with pads on the crystal holder without leads.
The letter Р after the last element of the designation is for devices with pair selection, the letter Г is for selection in fours, the letter К is for selection in sixes.